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Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sobiesierski, Zbigniew Woolf, David A. Westwood, David I. Williams, Ralph |
| Copyright Year | 1991 |
| Abstract | Photoluminescence measurements have been used to characterize Si‐doped GaAs layers, ranging in thickness from 1.1–8.1 μm, grown on Si(111) and misorientated Si(100) substrates by molecular beam epitaxy. 4.2 K PL spectra for GaAs/Si (100) show a strain‐induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.8± 0.15 kbar acting on the GaAs layer. Similar measurements for GaAs/Si(111) indicate that the GaAs layer is subject to a biaxial tensile stress of 3.9±0.15 kbar at 4.2 K. Furthermore, the intensity and line shape of luminescence features for GaAs/Si(111) for the first time indicate a crystalline quality comparable with the best GaAs/Si(100) material. |
| Starting Page | 628 |
| Ending Page | 630 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.104550 |
| Alternate Webpage(s) | http://orca-mwe.cf.ac.uk/11203/1/Photoluminescence_measurements_for_GaAs_grown.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.104550 |
| Volume Number | 58 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
