Loading...
Please wait, while we are loading the content...
Similar Documents
REVIEW ARTICLE: Growth and characterization of 3C SiC and 2H AlN/GaN films and devices produced on step-free 4H SiC mesa substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Neudeck, Philip G. Skowronski, Marek Spry, David J. Trunek, Andrew J. |
| Copyright Year | 2007 |
| Abstract | While previously published experimental results have shown that the step-free (0?0?0?1) 4H?SiC mesa growth surface uniquely enables radical improvement of 3C?SiC and 2H?AlN/GaN heteroepitaxial film quality (>100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C?SiC and 2H?AlN/GaN heteroepilayers grown on top of 4H?SiC mesas. For both 3C?SiC and AlN/GaN films nucleated on 4H?SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H?SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H?SiC bipolar diodes has been completely absent from our initial studies of 3C?SiC diodes, including diodes implemented on defective 3C?SiC heterolayers grown on stepped 4H?SiC mesas. |
| File Format | PDF HTM / HTML |
| DOI | 10.1088/0022-3727/40/20/S01 |
| Alternate Webpage(s) | https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20150022209.pdf |
| Alternate Webpage(s) | https://sic.grc.nasa.gov/files/JPhysDMesaEpi.pdf |
| Alternate Webpage(s) | https://doi.org/10.1088/0022-3727%2F40%2F20%2FS01 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
