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Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Neudeck, Philip G. Powell, Jeffery A. Trunek, Andrew J. Huang, X. R. Dudley, Michael |
| Copyright Year | 2002 |
| Abstract | A new growth process, herein named step-free surface heteroepitaxy, has achieved 3CSiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6HSiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4Hor 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (∆a/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices. |
| Starting Page | 311 |
| Ending Page | 314 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.4028/www.scientific.net/MSF.389-393.311 |
| Volume Number | 389-393 |
| Alternate Webpage(s) | https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20150022224.pdf |
| Alternate Webpage(s) | https://sic.grc.nasa.gov/files/ICSCRM2001-3Chepi.pdf |
| Alternate Webpage(s) | https://doi.org/10.4028/www.scientific.net%2FMSF.389-393.311 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
