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elf-assembly and electrical characteristics of 4-pentynoic acid unctionalized Fe 3 O 4-- Fe 2 O 3 nanoparticles on SiO 2 / nSi ainaa
| Content Provider | Semantic Scholar |
|---|---|
| Author | Baharuddin, Aqilah Ang, Bee Chin Wong, Yew Hoong |
| Copyright Year | 2017 |
| Abstract | A novel investigation on a relationship between temperature-influential self-assembly (70–300 ◦C) of 4pentynoic acid functionalized Fe3O4-Fe2O3 nanoparticles (NPs) on SiO2/n-Si with electrical properties was reported with the interests for metal-oxide-semiconductor applications. X-ray diffractometer (XRD) analysis conveyed that 8 ± 1 nm of the NPs were assembled. Increasing heating temperature induced growth of native oxide (SiO2). Raman analysis confirmed the coexistence of Fe3O4-Fe2O3. Attenuated Total Reflectance Infrared (ATR-IR) spectra showed that self-assembly occurred via Si O C linkages. While Si O C linkages were broken down at elevated temperatures, formations of Si-OH defects were amplified; a consequence of physisorbed surfactants disintegration. Atomic force microscopy (AFM) showed that sample with more physisorbed surfactants exhibited the highest root-mean-square (RMS) roughness (18.12 ± 7.13 nm) whereas sample with lesser physisorbed surfactants displayed otherwise (12.99 ± 4.39 nm RMS roughness). Field Emission Scanning Electron Microscope (FE-SEM) analysis showed non-uniform aggregation of the NPs, deposited as film (12.6 m thickness). The increased saturation magnetization (71.527 A m2/kg) and coercivity (929.942 A/m) acquired by vibrating sample magnetometer (VSM) of the sample heated at 300 ◦C verified the surfactants’ disintegration. Leakage current density-electric field (J-E) characteristics showed that sample heated at 150 ◦C with the most aggregated NPs as well as the most developed Si O C linkages demonstrated the highest breakdown field and barrier height at 2.58 × 10−3 MV/cm and 0.38 eV respectively. Whereas sample heated at 300 ◦C with the least Si O C linkages as well as lesser aggregated NPs showed the lowest breakdown field −3 and barrier height at 1.08 × 10 MV/cm and 0.19 eV respectively. This study opens up better understandings on how formation and breaking down of covalent linkages as well as accumulation of defects, particularly prior temperature influential self-assembly at the interfaces, affected electrical breakdown field and barrier height. Hence, possible future development of self-assembly silicon-based metal-oxidesemiconductor (MOS) structure particularly in the presence of SiO2 can be deliberated. © 2017 Elsevier B.V. All rights reserved. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://umexpert.um.edu.my/file/publication/00012735_151220_62782.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
