Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Content Provider	Semantic Scholar
Author	Liao, Mengya Chen, Siming Liu, Zhixin Wang, Yi Ponnampalam, Lalitha Zhou, Zichuan Wu, Jiang Tang, Mingchu Shutts, Samuel Liu, Zizhuo Smowton, Peter M. Yu, Si-Yuan Seeds, Alwyn J. Liu, Huiyun
Copyright Year	2018
Abstract	We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than −150  dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
Starting Page	1062
Ending Page	1066
Page Count	5
File Format	PDF HTM / HTML
DOI	10.1364/PRJ.6.001062
Volume Number	6
Alternate Webpage(s)	http://orca.cf.ac.uk/115267/7/prj-6-11-1062.pdf
Alternate Webpage(s)	http://orca-mwe.cf.ac.uk/115267/1/341901.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article