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Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ha, Yong H. Kim, Se-Hun Moon, Dae Won Jhe, Ji-Hong Shin, Jung Han |
| Copyright Year | 2001 |
| Abstract | The effect of the Si layer thickness on the Er3+ photoluminescence properties of the Er-doped Si/SiO2 superlattice is investigated. We find that the Er3+ luminescence intensity increases by over an order of magnitude as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties. |
| Starting Page | 287 |
| Ending Page | 289 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1383802 |
| Volume Number | 79 |
| Alternate Webpage(s) | http://spl.kaist.ac.kr/file/Published%20Papers/(12)KRISS%20SL.pdf |
| Alternate Webpage(s) | http://koasas.kaist.ac.kr/bitstream/10203/11403/1/apl287-79-2001.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1383802 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
