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Influence of sub-nm scale dimensional control on the Er3+luminescence properties of Er-doped Si/SiO2 superlattices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Jhe, Ji Hong Shin, Jung Han Ha, Yong H. Moon, Dae Won |
| Copyright Year | 2001 |
| Abstract | SiO2 or by varying the thickness of the Si layers from 0.6 to 3.6 nm. The structure and the composition of the films were confirmed using transmission electron microscopy(TEM) and medium energy ion scattering spectroscopy(MEIS). We find that the Erluminescence increases very strongly as the buffer layer thickness is increased, even though the excitation of Er ions occurs through carriers generated in Si layers. Furthermore, Erluminescence can be increased even further by |
| Starting Page | 176 |
| Ending Page | 180 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| Volume Number | 39 |
| Alternate Webpage(s) | http://spl.kaist.ac.kr/file/Published%20Papers/(15)ISPSA%201999%20JiHong.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |