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Method of Manufacturing Nitride Semconductor Light Emitting Device Background of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Seo, Joong Seok |
| Copyright Year | 2017 |
| Abstract | Disclosed herein is a method of manufacturing a nitride Semiconductor light emitting device. a nitride Semiconduc tor crystal film is grown on a Substrate. The nitride Semi conductor crystal film has a composition represented as All InGaN (0sxs 1,0sys 1,0s x+ys 1). After that, in order to remove an oxide film naturally formed on the nitride Semiconductor crystal film, a Surface treatment pro ceSS is performed on the nitride Semiconductor crystal film by making use of hydrogen gas or mixed gases containing hydrogen. Subsequently, on the nitride Semiconductor crys tal film there are Successively formed a first conductive nitride Semiconductor layer, an active layer, and a Second conductive nitride Semiconductor layer. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/a5/f9/17/329161c5c19050/US20050090032A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
