NDLI: Manufacturing Method of Group Iii Nitride Semconductor Light-emitting Device Technical Field

Content Provider	Semantic Scholar
Copyright Year	2017
Abstract	The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, includ ing a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a Sub strate, in which a substrate on which is formed a foundation layer including a monocrystalline group III nitride semicon ductor is used as the Substrate, and lamination films are formed on the foundation layer by a sputtering method, with the Substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal being placed in a sputtering chamber.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://patentimages.storage.googleapis.com/1f/47/c9/34c99757aa2d16/US20090142870A1.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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