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Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
| Content Provider | Semantic Scholar |
|---|---|
| Author | Choi, Sung-Jin Han, Jin-Woo Kim, Sungho Jang, Moongyu Kim, Kwang Hee Lee, Gi Sung Song, Myeong Ho Park, Yun Chang Kim, Jeoung Woo Choi, Yang-Kyu |
| Copyright Year | 2009 |
| Abstract | A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (V th) shift of 4.5 V is achieved in a fast programming time of 100 ns. |
| Starting Page | 78 |
| Ending Page | 81 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/LED.2008.2008667 |
| Volume Number | 30 |
| Alternate Webpage(s) | http://silk.kookmin.ac.kr/img_up/shop_pds/kmusilk/contents/myboard/048EnhancementofProgramSpeedinDopantSegre.pdf |
| Alternate Webpage(s) | http://nobent.kaist.ac.kr/paper/2009/FJ_Sung-Jin%20Choi_DSSB.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/LED.2008.2008667 |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
