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Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zhao, S. Kibria, Golam Wang, Qu-Quan Nguyen, Hieu Pham Trung Mi, Zetian |
| Copyright Year | 2013 |
| Abstract | The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices. |
| File Format | PDF HTM / HTML |
| DOI | 10.1039/c3nr00387f |
| PubMed reference number | 23661186 |
| Journal | Medline |
| Volume Number | 5 |
| Issue Number | 12 |
| Alternate Webpage(s) | http://www.rsc.org/suppdata/nr/c3/c3nr00387f/c3nr00387f.pdf |
| Alternate Webpage(s) | https://doi.org/10.1039/c3nr00387f |
| Journal | Nanoscale |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
