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The Parameter Space of Atomic Layer Deposition of Ultra-Thin Oxides on Graphene
| Content Provider | Semantic Scholar |
|---|---|
| Author | Aria, Adrianus Indrat Nakanishi, Kenichi Xiao, Long Braeuninger-Weimer, Philipp Abhay, Arora Sagade Alexander-Webber, Jack A. Hofmann, Stephan |
| Copyright Year | 2016 |
| Abstract | Atomic layer deposition (ALD) of ultra-thin aluminum oxide (AlOx) films was systematically studied on supported CVD graphene. We show that by extending the precursor residence time, using either a multiple-pulse sequence or a soaking period, an ultra-thin continuous AlOx films can be achieved directly on graphene using standard H2O and trimethylaluminum (TMA) precursors even at a high deposition temperatures of 200°C, without the use of surfactants or other additional graphene surface modifications. To obtain conformal nucleation a precursor residence time of >2s is needed, which is not prohibitively long but sufficient to account for the slow adsorption kinetics of the graphene surface. In contrast, a shorter residence time results in heterogeneous nucleation that is preferential to defect/selective sites on the graphene. These |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.repository.cam.ac.uk/bitstream/handle/1810/261610/Aria_et_al-2016-ACS_Applied_Materials_and_Interfaces-AM.pdf?isAllowed=y&sequence=1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
