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Design of a SiGe Power Amplifier for the 81 – 86 GHz E-Band
| Content Provider | Semantic Scholar |
|---|---|
| Author | Carmona, Manuel Bejarano |
| Copyright Year | 2014 |
| Abstract | This thesis presents the design of a two-stage differential cascode Power Amplifier for 81-86 GHz E-Band applications. Two stacked 1-to-1 transformers are used for power combining and single-ended to differential conversion. According to EM simulations, input and output transformers show an insertion loss of -0.63 dB and -0.45 dB respectively. The PA was realized in SiGe technology using Infineon B7HF200 0.18 μm SiGe HBT process with fT/ fmax 200/250 GHz. An inter-stage matching network consisting of a LC-match was used in the interface between input and output stage. Although the design has been taped-out, the results presented are based on post-layout simulations as the chip has not arrived on time for publication. The PA delivers 18 dBm saturated output power and exhibits a gain of 15.7 dB at 83.5 GHz when operated from a 3.5 V DC supply, reaching 10.1% peak PAE. The complete design occupies an area of 0.026 mm2 excluding the pads. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.eit.lth.se/sprapport.php?uid=798 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
