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SUBMllTED TO JET PROPULSION LABORATORY PASADENA , CA CONTRACT TITLE MEASUREMENT OF CARRIER TRANSPORT AND RECOMBINATION PARAMETER IN HEAVILY DOPED SILICON Minority Carrier Transport in Heavily Doped n-Typed Silicon
| Content Provider | Semantic Scholar |
|---|---|
| Author | Alamo, Jesús A. Del |
| Copyright Year | 2004 |
| Abstract | The minority carrier transport and recombination parameters in heavily doped bulk silicon have been measured. Both Si:P and Si:B with bulk dopings from lo" to lozo cm" have been studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime r, the minority carrier mobility c, and the equilibrium minority carrier density no or po (in p type and n-type Si respectively). Knowledge of no and po is equivalent to knowledge of bandgap narrowing AEG(NA) and AEG(ND). However, dc current-voltage measurements can never measure all three of these parameters, and some M or timetransient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transistors with heavily doped base regions and transient optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility and bandgap narrowing have been measured as a function of both p and n type dopant densities. Some interesting results: 1. Minority carrier electron and hole mobilities in heavily doped p and n-type Si are approximately a factor of two higher than the mobilities of these carriers as majority carriers. These are the first measurements of minority carrier mobility in the highly doped range. 2. Band-gap narrowing in n-type Si is negligible up to the lOl8 d o p ing level, and reaches almost 100 meV at lo2' cm". In ptype Si, band-gap narrowing exists as low as 1017 and reaches 120 meV at 3. Minority carrier lifetimes in processed heavily doped Si are best modeled by lifetime dependencies on doping that differ from the commonly used "band to band Auger" dependence. Best fits of minority carrier mobility, band-gap narrowing and lifetime as a function of doping density (in the heavily doped range) have been constructed to d o w accurate modeling of minority carrier transport in heavily doped Si. cm+. Minority Carrier Transport in Heavily Doped Si:B VOl. I1 Stanley E. Swirhun and Richard M. Swanson Stanford University Prepared for the Jet Propulsion Laboratory |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19870012870.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
