Loading...
Please wait, while we are loading the content...
Similar Documents
Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kaschieva, S. Stefanov, K. G. Karpuzov, Dimitre |
| Copyright Year | 1998 |
| Abstract | 2 structures implanted with 50-keV boron ions is studied by deep-level transient spectroscopy (DLTS) measurements. The DLTS spectra of ion-implanted samples exhibit one peak which corresponds to a deep level located in the forbidden gap of the silicon matrix at Ec-0.40 eV below the conducting band edge. New additional shallower levels are found in the spectra following bombardment by high-energy electrons, the peak intensity being dependent on the irradiation dose. The corresponding activation energy of the created defects, the density of the traps, and the electron-capture cross sections are evaluated. |
| Starting Page | 561 |
| Ending Page | 563 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s003390050713 |
| Volume Number | 66 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/s003390050713 |
| Alternate Webpage(s) | https://doi.org/10.1007/s003390050713 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |