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A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6 H – SiC
| Content Provider | Semantic Scholar |
|---|---|
| Author | Gong, Ming Fung, S. Beling, C. D. |
| Copyright Year | 1999 |
| Abstract | 1.7 MeV electron irradiation-induced deep levels in p-type 6H–SiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV10.55 eV andEV10.78 eV. They have been identified as two different defects because they have different thermal behaviors. These defects at EV10.55 eV andEV10.78 eV are annealed out at 500–200 °C, respectively, and are different from the main defects E1/E2, Z1/Z2 observed in electron irradiated n-type 6H–SiC. This indicates that new defects have been formed in p-type 6H–SiC during electron irradiation. © 1999 American Institute of Physics. @S0021-8979 ~99!05010-0# |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://hub.hku.hk/bitstream/10722/42189/1/40644.pdf?accept=1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
