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First-Principles Calculation of High Strain-Induced Leakage Current in Silicon Dioxide used for Gate Dielectrics
| Content Provider | Semantic Scholar |
|---|---|
| Author | Moriya, Hiroshi Iwasaki, Tadaharu Miura, Hiroyuki |
| Copyright Year | 2002 |
| Abstract | l.Introduction Increasing capacitance of a gate dielectric and decreasing resistivity of a gate electrode are indispensable for improving electronic performance of MOSFETs. However, simple thinning of a gate oxide film causes high leakage current because of an increase in the tunneling current through the oxide film. In addition, it has been found that tensile stress higher than I GPa often occrus in new materials, such as metal-silicides and tungsten, that are used for a gate elecffode [1]. Since it is well known that tensile strain in crystals reduces the bandgap of materials, such a high tensile stress may decrease the bandgap of the thin gate oxide and, thus, further increase leakage current [2]. In light of this background, we investigated the mechanical stress (strain)-induced leakage current through a SiO2 gate dielectric. The change in the bandgap of SiO2 caused by crystallographic strain was analyzed by a firstprinciples calculation. The leakage current was estimated by applyrng the Wentzel-Kramers-Brillouin (WKB) approximation [3]. A finite element method (FEM) was also used to analyze the strain fietd in a MOSFET structure. The increase in the leakage current caused by a tungsten gate electrode was evaluated quantitatively. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2002.B-5-2 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2002/B-5-2/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2002.B-5-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
