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Investigation of Random Grain-Boundary Induced Variability for Stackable NAND Flash Using 3D Voronoi Grain Patterns
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yang, Chun-Hui |
| Copyright Year | 2013 |
| Abstract | Abstract We investigate the random grain boundaries (GBs) induced variability in poly-Si thin film transistor (TFT) using 3D Voronoi grain patterns. Compared with the 1D and 2D methods, the 3D Voronoi grain can show a more realistic variability when devices are downscaled along the channel height (Hch) direction. Our study indicates that a full 3D consideration is needed when modeling the random GB induced variation. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2013.A-4-4 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2013/A-4-4/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2013.A-4-4 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |