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Ansotropic Dry Etching of Cu-containing Layers Cross-reference to Related Applications
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | PCT No.: TOKYO (JP) O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that 10/517,764 react with the oxidized Cu (360) to form volatile Cu containing etch products (390). The invention allows for Jun. 27, 2003 low-temperature, anisotropic etching of pure Cu and Cu containing layers in accordance with a patterned hard mask PCT/US03/16240 or photoresist (230, 330). |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/08/b7/a3/1ac5392ac874cc/US20050224456A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
