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Improved Optical Properties of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices
| Content Provider | Scilit |
|---|---|
| Author | Fudeta, Mayuko Asahi, Hajime Kim, Seong-Jin Noh, Joo-Hyong Asami, Kumiko Gonda, Shun-Ichi |
| Copyright Year | 1999 |
| Description | Journal: Japanese Journal of Applied Physics Optical properties of multilayer quantum dots (MQDs) self-formed in the GaP/InP short-period superlattice (SL)/InGaP multilayer structures are investigated as a function of InGaP barrier thickness (B). Photoluminescence (PL) linewidth broadening with temperature is improved and tends to reduce by decreasing B. This is attributed to the vertical coupling effect between QDs and their vertical alignment. Temperature variation of PL properties shows the exciton behavior. At low temperatures, emissions from both bound exciton and free exciton appear under the weak excitation density condition. Integrated PL intensity is quite stable up to 120 K. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.38.1078/pdf |
| Ending Page | 1080 |
| Page Count | 3 |
| Starting Page | 1078 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.38.1078 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 2S |
| Volume Number | 38 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1999-02-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Electroluminescence Photoluminescence Light Emitting Diode Light Emitting Diodes |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
