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Straight Quantum Wires Self-Formed by Growing GaP/InP Short-Period Superlattices on GaAs(011) Substrate
| Content Provider | Scilit |
|---|---|
| Author | Kim, Seong-Jin Asahi, Hajime Asami, Kumiko Fudeta, Mayuko Gonda, Shun-Ichi |
| Copyright Year | 1999 |
| Description | Journal: Japanese Journal of Applied Physics Quantum wires (QWRs) are self-formed by strain-induced composition modulation while growing $(GaP)_{ n }(InP)_{ m }$ short-period superlattices (SLs) on GaAs(011) substrates by gas source MBE. Improvements in straightness, uniformity and length of these QWRs are observed, compared with those on GaAs(100) substrates. The QWR direction is parallel to the [011] direction and is mainly determined by the easy migration direction of group III atoms on the surface. Multilayer quantum wires (MQWRs), self-formed while growing $(GaP)_{ n }(InP)_{ m }$ SL/InGaP multilayers exhibit strong polarization anisotropy of as large as 71% in their photoluminescence (PL) emission. Temperature-insensitive variation of the PL peak energy is observed in these MQWR structures. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.38.L706/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.38.l706 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 7A |
| Volume Number | 38 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1999-07-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
