NDLI: Group-III nitride quantum heterostructures grown by molecular beam epitaxy

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Group-III nitride quantum heterostructures grown by molecular beam epitaxy

Content Provider	Scilit
Author	Grandjean, Nicolas Damilano, Benjamin Massies, Jean
Copyright Year	2001
Description	Journal: Journal of Physics: Condensed Matter In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed out. We also emphasize the role of in situ analysis tools such as reflection high-energy electron diffraction. The optical properties of several kinds of quantum heterostructure are presented. They illustrate well the combined effects of polarization fields and carrier localization. Finally, the use of InGaN/GaN QWs in LEDs for white light emission is presented.
Related Links	http://iopscience.iop.org/article/10.1088/0953-8984/13/32/305/pdf
Ending Page	6960
Page Count	16
Starting Page	6945
ISSN	09538984
e-ISSN	1361648X
DOI	10.1088/0953-8984/13/32/305
Journal	Journal of Physics: Condensed Matter
Issue Number	32
Volume Number	13
Language	English
Publisher	IOP Publishing
Publisher Date	2001-07-26
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Condensed Matter Molecular Beam Epitaxy
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science

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