NDLI: Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)

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Thermodynamic analysis of group III nitrides grown by metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)

Content Provider	Scilit
Author	Koukitu, Akinori Kumagai, Yoshinao
Copyright Year	2001
Description	Journal: Journal of Physics: Condensed Matter An analysis of element incorporation from a thermodynamic viewpoint is described for the vapour-phase epitaxy (metal-organic vapour-phase epitaxy (MOVPE), hydride (or halide) vapour-phase epitaxy (HVPE) and molecular beam epitaxy (MBE)) of group III nitrides. The driving force of binary nitrides and the vapour-solid distribution relationship for ternary and quaternary nitrides are discussed. It is shown that the growth rate and alloy composition of group III nitrides are thermodynamically controlled. The thermodynamically predicted orders in which binary nitrides incorporate into alloys are very similar for all epitaxial methods and the order is basically governed by the Gibbs free energy of formation of the binary nitrides irrespective of the growth method.
Related Links	http://iopscience.iop.org/article/10.1088/0953-8984/13/32/303/pdf
Ending Page	6934
Page Count	28
Starting Page	6907
ISSN	09538984
e-ISSN	1361648X
DOI	10.1088/0953-8984/13/32/303
Journal	Journal of Physics: Condensed Matter
Issue Number	32
Volume Number	13
Language	English
Publisher	IOP Publishing
Publisher Date	2001-07-26
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Condensed Matter Gibbs Free Energy Molecular Beam Epitaxy
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science

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