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Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
| Content Provider | Scilit |
|---|---|
| Author | Wei, Jia-Nan Guo, Hong-Xia Zhang, Feng-Qi Luo, Yin-Hong Ding, Li-Li Pan, Xiao-Yu Zhang, Yang Liu, Yu-Hui |
| Copyright Year | 2017 |
| Description | Journal: Chinese Physics B The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work. The test specimens were firstly subjected to$ ^{60}$Co γ-ray and then the SEU evaluation was conducted using$ ^{209}$Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement. |
| Related Links | http://iopscience.iop.org/article/10.1088/1674-1056/26/9/096102/pdf |
| ISSN | 16741056 |
| e-ISSN | 20583834 |
| DOI | 10.1088/1674-1056/26/9/096102 |
| Journal | Chinese Physics B |
| Issue Number | 9 |
| Volume Number | 26 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2017-08-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics B Nuclear Energy and Engineering Event Upset Ferroelectric Material Ferroelectric Random Impact of Ionizing Ionizing Radiation Radiation Effect Single Event |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
