NDLI: Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons*

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Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons*

Content Provider	Scilit
Author	Jin, Xiao-Ming Chen, Wei Li, Jun-Lin Qi, Chao Guo, Xiao-Qiang Li, Rui-Bin Liu, Yan
Copyright Year	2019
Description	Journal: Chinese Physics B This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte–Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.
Related Links	https://iopscience.iop.org/article/10.1088/1674-1056/ab4175/pdf
ISSN	16741056
e-ISSN	20583834
DOI	10.1088/1674-1056/ab4175
Journal	Chinese Physics B
Issue Number	10
Volume Number	28
Language	English
Publisher	IOP Publishing
Publisher Date	2019-09-05
Access Restriction	Open
Subject Keyword	Journal: Chinese Physics B Nuclear Energy and Engineering
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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