NDLI: GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes

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GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes

Content Provider	Scilit
Author	Lai, Chun-Feng Chao, Chia-Hsin Kuo, Hao-Chung Yu, Peichen Yen, His-Hsuan Yeh, Wen-Yung
Copyright Year	2010
Description	Journal: Japanese Journal of Applied Physics Directional light enhancement behavior including collimated far-field patterns sensitively depending on both photonic crystal (PhC) lattice constant and GaN thickness from GaN film-transferred light-emitting diodes (FTLEDs) with a triangular PhC lattice has been experimentally studied. Far-field pattern measurement in the Γ–M and Γ–K directions of GaN PhC FTLEDs with various lattice constants and GaN thicknesses revealed different far-field profiles as detemined on the basis of guided mode extraction of Bragg's diffraction. Additionally, three-dimensional (3D) far-field measurement revealing the PhC diffraction patterns was also demonstrated. We also used the 3D finite-different time-domain method to confirm the experimental results.
Related Links	http://pdfs.semanticscholar.org/17dd/128b2cff46ee891fa09acaef8991e2e3f405.pdf http://iopscience.iop.org/article/10.1143/JJAP.49.04DG09/pdf
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.49.04dg09
Journal	Japanese Journal of Applied Physics
Issue Number	4
Volume Number	49
Language	English
Publisher	IOP Publishing
Publisher Date	2010-04-20
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Public, Environmental and Occupational Health
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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