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Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices
| Content Provider | Scilit |
|---|---|
| Author | He, Ze-Zhao Yang, Ke-Wu Yu, Cui Wei-Li, Lu Liu, Qing-Bin Lu, Wei-Li Feng, Zhi-Hong Cai, Shu-Jun |
| Copyright Year | 2015 |
| Description | Journal: Chinese Physics Letters We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ωmm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance $R_{c}$ of bilayer graphene improves from an average of 0.24 ωmm to 0.1 ωmm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/32/11/117204/pdf |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/32/11/117204 |
| Journal | Chinese Physics Letters |
| Issue Number | 11 |
| Volume Number | 32 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2015-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Public, Environmental and Occupational Health Ohmic Contact Contact Resistance Bilayer Epitaxial Graphene |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
