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High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
| Content Provider | Scilit |
|---|---|
| Author | He, Ze-Zhao Yang, Ke-Wu Yu, Cui Liu, Qing-Bin Wang, Jing-Jing Li, Jia Lu, Wei-Li Feng, Zhi-Hong Cai, Shu-Jun |
| Copyright Year | 2016 |
| Description | Journal: Chinese Physics B In this paper, high temperature direct current (DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25 °C to 200 °C. At a gate voltage of −8 V (far from Dirac point), the drain-source current decreases obviously with increasing temperature, but it has little change at a gate bias of +8 V (near Dirac point). The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies. Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures. The devices exhibit almost unchanged DC performances after high temperature measurements at 200 °C for 5 hours in air ambience, demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices. |
| Related Links | http://iopscience.iop.org/article/10.1088/1674-1056/25/6/067206/pdf |
| ISSN | 16741056 |
| e-ISSN | 20583834 |
| DOI | 10.1088/1674-1056/25/6/067206 |
| Journal | Chinese Physics B |
| Issue Number | 6 |
| Volume Number | 25 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics B Applied Physics Thermal Stabilities High Temperature Sic Substrate Bilayer Epitaxial Graphene |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
