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Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy
| Content Provider | Scilit |
|---|---|
| Author | Shibata, Noriyoshi Ohki, Akira Zembutsu, Sakae Katsui, Akinori |
| Copyright Year | 1988 |
| Description | Journal: Japanese Journal of Applied Physics High-purity ZnSe layers grown by metalorganic vapor phase epitaxy exhibit an unusually strong luminescence band at 2.60 eV (Y band), which is extremely sensitive to residual impurity concentration. Y emission depends on the lattice mismatch between the epilayer and substrate. The emission decreases with the use of a lattice-matched $In_{ x }Ga_{1-x }$As substrate. With the GaAs substrate, the emission intensity varies with layer thickness reflecting lattice relaxation in the ZnSe/GaAs structure. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.27.L441/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.27.l441 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 3A |
| Volume Number | 27 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1988-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Photoluminescence |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |