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Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face
| Content Provider | Scilit |
|---|---|
| Author | Okamoto, Mitsuo Iijima, Miwako Fukuda, Kenji Okumura, Hajime |
| Copyright Year | 2012 |
| Description | Journal: Japanese Journal of Applied Physics We characterized the $SiO_{2}$/SiC interface by capacitance–voltage (C–V) measurement in order to obtain p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on the 4H-SiC(000) C-face. Wet gate oxidation was preferable for both n- and p-type MOS capacitors, but p-type MOS interface properties were inferior to those of n-type MOS capacitors. The cause of the large flat-band shift for the p-type sample was discussed on the basis of C–V measurements by the light illumination technique. We also investigated the influence of the high-temperature annealing process after gate oxidation on the MOS interface properties. The p-type MOS interface was more sensitive to the annealing process than the n-type MOS interface. We fabricated 4H-SiC C-face p-channel MOSFETs by wet gate oxidation and low-temperature postdeposition annealing in $He–H_{2}$ ambient. The normal FET operation was accomplished on the 4H-SiC C-face for the first time. Those devices, however, indicated low channel mobility and large threshold voltage. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.51.046504/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.51.046504 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4R |
| Volume Number | 51 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2012-03-30 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
