NDLI: Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Content Provider	Scilit
Author	Tang, Lan-Feng Yu, Guang Lu, Hai Wu, Chen-Fei Qian, Hui-Min Zhou, Dong Zhang, Rong Zheng, You-Dou Huang, Xiao-Ming
Copyright Year	2015
Description	Journal: Chinese Physics B The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.
Related Links	http://iopscience.iop.org/1674-1056/24/8/088504/pdf/1674-1056_24_8_088504.pdf
ISSN	16741056
e-ISSN	20583834
DOI	10.1088/1674-1056/24/8/088504
Journal	Chinese Physics B
Issue Number	8
Volume Number	24
Language	English
Publisher	IOP Publishing
Publisher Date	2015-08-01
Access Restriction	Open
Subject Keyword	Journal: Chinese Physics B Applied Physics White Light Threshold Voltage Thin Film Transistor Light Illumination Positive Gate Bias Stress Gate Bias
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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