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Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors
| Content Provider | Scilit |
|---|---|
| Author | Park, Hamin Park, Ick-Joon Jung, Dae Yool Lee, Khang June Yang, Sang Yoon Choi, Sung-Yool |
| Copyright Year | 2016 |
| Description | Journal: 2d Materials We propose a polymer-free graphene transfer technique for chemical vapor deposition-grown graphene to ensure the intrinsic electrical properties of graphene for reliable transistor applications. The use of a metal catalyst as a supporting layer avoids contamination from the polymer material and graphene films become free of polymer residue after the transfer process. Atomic force microscopy and Raman spectroscopy indicate that the polymer-free transferred graphene shows closer properties to intrinsic graphene properties. The reliability of graphene field-effect transistors (GFETs) was investigated through the analysis of the negative gate bias-stress-induced instability. This work reveals the effect of polymer residues on the reliability of GFETs, and that the developed new polymer-free transfer method enhances the reliability. |
| Related Links | http://iopscience.iop.org/article/10.1088/2053-1583/3/2/021003/pdf |
| ISSN | 20531583 |
| e-ISSN | 20531583 |
| DOI | 10.1088/2053-1583/3/2/021003 |
| Journal | 2d Materials |
| Issue Number | 2 |
| Volume Number | 3 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-03-24 |
| Access Restriction | Open |
| Subject Keyword | Journal: 2d Materials Raman Spectroscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Mechanics of Materials Condensed Matter Physics Materials Science Mechanical Engineering |
