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Graphene based Van der Waals contacts on $MoS_{2}$ field effect transistors
| Content Provider | Scilit |
|---|---|
| Author | Mootheri, Vivek Arutchelvan, Goutham Banerjee, Sreetama Sutar, Surajit Leonhardt, Alessandra Boulon, Marie-Emmanuelle Huyghebaert, Cedric Houssa, Michel Asselberghs, Inge Radu, Iuliana Heyns, Marc M. Lin, Dennis |
| Copyright Year | 2020 |
| Description | Journal: 2d Materials Device performance of two dimensional (2D) material based field effect transistors is severely limited by the relatively high contact resistance encountered at the contact-channel interface. Metal-graphene hybrid contacts have been previously used to improve the contact resistance of devices based on thick exfoliated materials. Here we report a novel 2D FET fabrication process entailing the transfer of metal-graphene hybrid contacts on top of 3 monolayer-thick chemical vapor deposition (CVD) $MoS_{2}$, enabling a lithography free contacting strategy, with respect to $MoS_{2}$. Three different metal-graphene stacks consisting of Ni, Pd and Ru, have been fabricated, transferred onto $MoS_{2}$ and characterized extensively using electrical and physical characterization techniques. We find strong correlation between the measured electrical characteristics and physical characterization of the contact interface. From Raman spectra measurement, maximum charge transfer of 1.7 × $10^{13}$ $cm^{−2}$ is observed between graphene and Ru, leading to an improved contact resistance for $MoS_{2}$ devices with Ru-Gr contacts. Ru-Gr contact shows the lowest contact resistance of 9.34 kΩ · µm among the three metal-graphene contact stacks reported in this article. This contact resistance is also the best among reported CVD grown graphene contacted $MoS_{2}$ devices. Using more than 400 devices, we study the impact of the different metal-graphene contacts on other electrical parameters such as hysteresis, sub-threshold swing and threshold voltage. The metal-graphene contact stack transfer technique represents a technologically relevant contacting approach which can be further up-scaled to larger wafer areas. |
| Related Links | https://iopscience.iop.org/article/10.1088/2053-1583/abb959/pdf |
| ISSN | 20531583 |
| e-ISSN | 20531583 |
| DOI | 10.1088/2053-1583/abb959 |
| Journal | 2d Materials |
| Issue Number | 1 |
| Volume Number | 8 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2020-09-17 |
| Access Restriction | Open |
| Subject Keyword | Journal: 2d Materials Contact Resistance Different Metal Graphene Improve the Contact |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Mechanics of Materials Condensed Matter Physics Materials Science Mechanical Engineering |
