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Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
| Content Provider | Scilit |
|---|---|
| Author | Tabata, A. Lima, A. P. Leite, J. R. Lemos, V. Schikora, D. Schöttker, B. Köhler, U. As, D. J. Lischka, K. |
| Copyright Year | 1999 |
| Description | Journal: Semiconductor Science and Technology Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/14/4/005/pdf |
| Ending Page | 322 |
| Page Count | 5 |
| Starting Page | 318 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/14/4/005 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 4 |
| Volume Number | 14 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1999-01-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Molecular Beam Epitaxy Raman Spectroscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
