NDLI: Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

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Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

Content Provider	Scilit
Author	Shinohara, K. Motokawa, T. Kasahara, K. Shimomura, S. Sano, N. Adachi, A. Hiyamizu, S.
Copyright Year	1996
Description	Journal: Semiconductor Science and Technology Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy (MBE) were investigated for applications to GaAs/AlGaAs resonant tunnelling diodes with atomically flat (411)A GaAs/AlGaAs interfaces over an entire device area. These flat interfaces can be realized by MBE under certain growth conditions (growth temperature Ts=580°C and V/III pressure ratio of less than or equal to 11). When the V/III pressure ratio is high (above 15) for Ts=580°C, Si-doped GaAs on a (411)A substrate showed an n-type conduction similar to conventional Si-doped GaAs on (100) substrates. (411)A GaAs/AlGaAs interfaces grown under this condition, however, cannot become as flat and as superior as conventional (100) GaAs/AlGaAs interfaces. On the other hand, when the V/III pressure ratio is 7, an Si-doped GaAs layer on (411)A showed p-type conduction. In the case of a V/III pressure ratio of 10.5 and Ts=580°C, Si-doped GaAs still showed n-type conduction with the compensation ratio ν (≡(ND+NA)/(ND-NA)) = 2.3. This result suggests that Si can be used as an n-type dopant in GaAs for GaAs/AlGaAs resonant tunnelling diodes grown on (411)A GaAs substrates with atomically flat (411)A GaAs/AlGaAs interfaces.
Related Links	http://iopscience.iop.org/article/10.1088/0268-1242/11/1/001/pdf
Ending Page	L128
Page Count	4
Starting Page	L125
ISSN	02681242
e-ISSN	13616641
DOI	10.1088/0268-1242/11/1/001
Journal	Semiconductor Science and Technology
Issue Number	1
Volume Number	11
Language	English
Publisher	IOP Publishing
Publisher Date	1996-01-01
Access Restriction	Open
Subject Keyword	Journal: Semiconductor Science and Technology Applied Physics Molecular Beam Epitaxy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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