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Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2Films Using Conductive Atomic Force Microscopy
| Content Provider | Scilit |
|---|---|
| Author | Watanabe, Yukihiko Seko, Akiyoshi Kondo, Hiroki Sakai, Akira Zaima, Shigeaki Yasuda, Yukio |
| Copyright Year | 2004 |
| Description | Journal: Japanese Journal of Applied Physics We have developed a method of microscopically analyzing the degradation of gate $SiO_{2}$ films in actual metal-oxide-semiconductor (MOS) devices by conductive atomic force microscopy (C-AFM). In C-AFM images of electrically stressed $SiO_{2}$ films, leakage current spots on a nanometer scale were successfully observed. The observed current spots show characteristic behaviors similar to the transient stress-induced leakage current which can be detected by macroscopic electrical measurements using MOS capacitors. The appearance of the current spots is discussed on the basis of the mechanism by which holes are trapped and detrapped by stress-induced defects in $SiO_{2}$ films. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.43.L144/pdf |
| Ending Page | L147 |
| Page Count | 4 |
| Starting Page | L144 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.43.l144 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | No. 2A |
| Volume Number | 43 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2004-01-09 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Cultural Studies Leakage Current Conductive Atomic Force Microscopy Atomic Force Microscopy Stress Induced Leakage Current |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
