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SILC during NBTI Stress in PMOSFETs with Ultra-Thin SiON Gate Dielectrics
| Content Provider | Scilit |
|---|---|
| Author | Yan-Rong, Cao Yue, Hao Xiao-Hua, Ma Lei, Yu Shi-Gang, Hu |
| Copyright Year | 2008 |
| Description | Journal: Chinese Physics Letters Negative bias temperature instability (NBTI) and stress-induced leakage current (SILC) both are more serious due to the aggressive scaling lowering of devices. We investigate the SILC during NBTI stress in PMOSFETs with ultra-thin gate dielectrics. The SILC sensed range from -1 V to 1 V is divided into four parts: the on-state SILC, the near-zero SILC, the off-state SILC sensed at lower positive voltages and the one sensed at higher positive voltages. We develop a model of tunnelling assisted by interface states and oxide bulk traps to explain the four different parts of SILC during NBTI stress. |
| Related Links | http://pdfs.semanticscholar.org/19f1/1aa3c9c68f05492bba6c72131229c1547497.pdf http://iopscience.iop.org/article/10.1088/0256-307X/25/4/071/pdf |
| Ending Page | 1430 |
| Page Count | 4 |
| Starting Page | 1427 |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/25/4/071 |
| Journal | Chinese Physics Letters |
| Issue Number | 4 |
| Volume Number | 25 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2008-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Nuclear Energy and Engineering Ultra Thin Nbti Stress Sion Gate Gate Dielectrics Thin Sion |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
