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Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
| Content Provider | Scilit |
|---|---|
| Author | Kato, Kimihiko Sakashita, Mitsuo Takeuchi, Wakana Nakatsuka, Osamu Zaima, Shigeaki |
| Copyright Year | 2013 |
| Description | Journal: Journal of Physics: Conference Series |
| Related Links | http://iopscience.iop.org/article/10.1088/1742-6596/417/1/012001/pdf |
| ISSN | 17426588 |
| e-ISSN | 17426596 |
| DOI | 10.1088/1742-6596/417/1/012001 |
| Journal | Journal of Physics: Conference Series |
| Volume Number | 417 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2013-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Conference Series Stack Structure Electrical Properties Ge Gate Radical Process Gate Stack Interfacial Reactions Effect of Interfacial |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |