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Control of Interfacial Properties of $Al_{2}O_{3}$/Ge Gate Stack Structure Using Radical Nitridation Technique
| Content Provider | Scilit |
|---|---|
| Author | Kato, Kimihiko Kyogoku, Shinya Sakashita, Mitsuo Takeuchi, Wakana Kondo, Hiroki Takeuchi, Shotaro Nakatsuka, Osamu Zaima, Shigeaki |
| Copyright Year | 2011 |
| Description | Journal: Japanese Journal of Applied Physics We have investigated the control of the interfacial properties of $Al_{2}O_{3}$/Ge gate stack structures by the radical nitridation technique. In the $Al_{2}O_{3}$/Ge structures formed by the atomic layer deposition method, the interface state density increases with the deposition temperature due to the decrease in the thickness of the Ge oxide interlayer. On the other hand, the hysteresis width of the capacitance–voltage (C–V) characteristics decreases with increasing deposition temperature, which indicates a decrease in the oxide trap density near the interface. We also investigated the control of the interfacial structure by the radical nitridation of $Al_{2}O_{3}$/Ge to form an interfacial structure after the deposition of a high-k dielectric layer. The results of X-ray photoelectron spectroscopy reveal that an $Al_{2}O_{3}/Ge_{3}N_{4}/GeO_{2}$/Ge stack structure is formed after the radical nitridation owing to the minimal oxygen diffusion into the $Al_{2}O_{3}$/Ge interface. Furthermore, the interfacial mixing is suppressed after radical nitridation at less than 300 °C. As a result, we can decrease the interface state density of the $Al_{2}O_{3}$/Ge sample after the radical nitridation by more than one order of magnitude compared with that without radical nitridation. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.50.10PE02/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.50.10pe02 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 10S |
| Volume Number | 50 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2011-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Coatings and Films Radical Nitridation Interface State Density |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
