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Growth of SiC by Reaction between Thin Films and Ultrafine Particles
| Content Provider | Scilit |
|---|---|
| Author | Kaito, Chihiro Kaito Chihiro Kimura, Seiji Kimura Seiji Ojima, Yuuki Ojima Yuuki Hatayama, Yasuyuki Hatayama Yasuyuki Ban, Daisuke Ban Daisuke Nakada, Toshitaka Nakada Toshitaka Saito, Yoshio Saito Yoshio Koike, Chiyoe Koike Chiyoe |
| Copyright Year | 1999 |
| Description | Journal: Japanese Journal of Applied Physics In the case of a reaction between carbon particles and SiO films, silicon carbide was produced by heating above 900°C by the diffusion of Si atoms from Si crystals in SiO films into carbon particles. In the case of that between Si particles and carbon films, silicon carbide was produced above room temperature by the diffusion of carbon atoms into Si particles. In the above two cases, the direction of atom diffusion during the reaction was different. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.38.213/pdf |
| Ending Page | 214 |
| Page Count | 2 |
| Starting Page | 213 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.38.213 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 1R |
| Volume Number | 38 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1999-01-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Electron Microscopy Room Temperature Ultrafine Particle Thin Film |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
