Loading...
Please wait, while we are loading the content...
Similar Documents
Third Order Band Pass Filter With Double-Gate MOSFET: A Simulation Perspective
| Content Provider | Scilit |
|---|---|
| Author | Naidoo, Danurshan Srivastava, Viranjay M. |
| Copyright Year | 2021 |
| Description | Journal: Iop Conference Series: Materials Science and Engineering It is an extended version of the mathematical analysis of the proposed $3^{rd}$ order Band Pass Filter (BPF). This device design uses the Double-Gate (DG) MOSFET's which provides a better performance and reliability of the band pass filter. This $3^{rd}$ order BPF design improves the device performance characteristics, such as enhanced power efficiency and switching capabilities, due to the properties of DG MOSFET technology. Simulation analysis of the proposed filter model has been performed. The BPF model has been designed for lower and upper cut-off frequencies of 100 kHz and 1.7 MHz, respectively. The $3^{rd}$ order BPF filter has been modeled to have Butterworth characteristics, thus having a maximally flat pass-band response. |
| Related Links | https://iopscience.iop.org/article/10.1088/1757-899X/1126/1/012019/pdf |
| ISSN | 17578981 |
| e-ISSN | 1757899X |
| DOI | 10.1088/1757-899x/1126/1/012019 |
| Journal | Iop Conference Series: Materials Science and Engineering |
| Issue Number | 1 |
| Volume Number | 1126 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2021-03-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Iop Conference Series: Materials Science and Engineering Telecommunications |
| Content Type | Text |
| Resource Type | Article |
