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Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions
| Content Provider | Scilit |
|---|---|
| Author | Mendiratta, Namrata Tripathi, Suman Lata Kolla, Bhanu Prakash |
| Copyright Year | 2020 |
| Description | Journal: Iop Conference Series: Materials Science and Engineering In this paperan asymmetrical junctionless double-gate MOSFET(AJDG-MOSFET) has been analyzed using different gate oxide material like $SiO_{2}$ and $HfO_{2}$ and different gate contact material like aluminium, copper and polysilicon. To check the sensitivity of AJDG-MOSFET, a temperature analysis has been performed at a different temperature ranging 250-400K. The performance of AJDG-MOSFET is analyzed with transfer and output characteristics using 2D/3D simulation on Cogenda TCAD. The device performs better using $HfO_{2}$ as gate oxide and polysilicon as gate contact. The ideal subthreshold performance (DIBL=65mV/V, SS=68 mV/decade) is observed with a high value of $Ion/Ioff(∼10^{12}$) for 300K temperature. The analysis for temperature shows a very small variation in OFF current and found suitable for low power applications. |
| Related Links | https://iopscience.iop.org/article/10.1088/1757-899X/872/1/012012/pdf |
| ISSN | 17578981 |
| e-ISSN | 1757899X |
| DOI | 10.1088/1757-899x/872/1/012012 |
| Journal | Iop Conference Series: Materials Science and Engineering |
| Issue Number | 1 |
| Volume Number | 872 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2020-06-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Iop Conference Series: Materials Science and Engineering Condensed Matter Physics |
| Content Type | Text |
| Resource Type | Article |
