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Ion-beam-induced bending of semiconductor nanowires
| Content Provider | Scilit |
|---|---|
| Author | Hanif, Imran Camara, Osmane Tunes, Matheus Araújo Harrison, Robert William Greaves, Graeme Donnelly, Stephen E. Hinks, Jonathan A. |
| Copyright Year | 2018 |
| Description | Journal: Nanotechnology The miniaturization of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion-beam-induced deformation effects. In this work, transmission electron microscopy with in-situ ion bombardment has been used to directly observe the evolution of individual silicon and germanium NWs under irradiation. Silicon NWs were irradiated with either 6 keV neon ions or xenon ions at 5, 7 or 9.5 keV with a flux of 3×1013 ions/cm2/s. Germanium NWs were irradiated with 30 or 70 keV xenon ions with a flux of 1013 ions/cm2/s. These new results are combined with those reported in the literature in a systematic analysis using a custom implementation of the Transport of Ions in Matter Monte Carlo computer code to facilitate a direct comparison with experimental results taking into account the wide range of experimental conditions. Across the various studies this has revealed underlying trends and forms the basis of a critical review of the various mechanisms which have been proposed to explain the deformation of semiconductor NWs under ion irradiation. |
| Related Links | https://www.research.manchester.ac.uk/portal/files/81349537/Ion_Beam_Induced_Bending_of_Semiconductor_Nanowires.pdf http://iopscience.iop.org/article/10.1088/1361-6528/aac659/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/aac659 |
| Journal | Nanotechnology |
| Issue Number | 33 |
| Volume Number | 29 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-05-21 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology Semiconductor Nanowires In-situ Transmission Electron Microscopy Ion-irradiation-induced Bending |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |
