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In situ transmission electron microscopy of transistor operation and failure
| Content Provider | Scilit |
|---|---|
| Author | Wang, Baoming Islam, M. Zahabul Haque, M. Aman Chabak, Kelson Snure, Michael Heller, Eric Glavin, Nicholas Robert |
| Copyright Year | 2018 |
| Description | Journal: Nanotechnology Microscopy is typically used as a post-mortem analytical tool in performance and reliability studies on nanoscale materials and devices. In this study, we demonstrate real-time microscopy of operation and failure of AlGaN/GaN high electron mobility transistors inside the transmission electron microscope (TEM). Loading till failure was performed on the electron transparent transistors to visualize the failure mechanisms caused by self heating. At lower drain voltages, thermo-mechanical stresses induce irreversible microstructural deformation, mostly along the AlGaN/GaN interface, to initiate the damage process. At higher biasing, the self-heating deteriorates the gate and catastrophic failure takes place through metal/semiconductor inter-diffusion and/or buffer layer breakdown. This study indicates that the current trend of recreating the events, from damage nucleation to catastrophic failure, can be replaced by in-situ microscopy for quick and accurate account of the failure mechanisms. |
| Related Links | http://iopscience.iop.org/article/10.1088/1361-6528/aac591/pdf |
| ISSN | 09574484 |
| e-ISSN | 13616528 |
| DOI | 10.1088/1361-6528/aac591 |
| Journal | Nanotechnology |
| Issue Number | 31 |
| Volume Number | 29 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2018-05-17 |
| Access Restriction | Open |
| Subject Keyword | Journal: Nanotechnology Microscopic Research Gallium Nitride High Electron Mobility Transistor Transmission Electron Microscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Nanoscience and Nanotechnology Mechanics of Materials Mechanical Engineering Bioengineering Electrical and Electronic Engineering |
