NDLI: Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study

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Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study

Content Provider	Scilit
Author	Sheverdyaeva, Polina Hogan, Conor Sgarlata, Anna Fazi, Laura Fanfoni, Massimo Persichetti, Luca Moras, Paolo Balzarotti, Adalberto
Copyright Year	2018
Description	Journal: Journal of Physics: Condensed Matter We present a joint experimental and theoretical study of the electronic properties of the rebonded-step reconstructed Ge/Si(105) surface which is the main strained face found on Ge/Si(001) quantum dots and is considered a prototypical model system for surface strain relaxation in heteroepitaxial growth. Using a vicinal surface as a model system for obtaining a stable single-domain film structure with large terraces and rebonded-step surface termination, we realized an extended and ordered Ge/Si planar hetero-junction suitable for direct study with angle-resolved photoemission spectroscopy. At the coverage of four Ge monolayers photoemission spectroscopy reveals the presence of two-dimensional surface and film bands displaying energy-momentum dispersion compatible with the 5×4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface.
Related Links	http://iopscience.iop.org/article/10.1088/1361-648X/aae66f/pdf
ISSN	09538984
e-ISSN	1361648X
DOI	10.1088/1361-648x/aae66f
Journal	Journal of Physics: Condensed Matter
Issue Number	46
Volume Number	30
Language	English
Publisher	IOP Publishing
Publisher Date	2018-10-05
Access Restriction	Open
Subject Keyword	Journal: Journal of Physics: Condensed Matter Electronic Structure
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Materials Science

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