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The electronic structure of Si/Ge superlattices
| Content Provider | Scilit |
|---|---|
| Author | Bass, J. M. Matthai, C. C. |
| Copyright Year | 1989 |
| Description | Journal: Journal of Physics: Condensed Matter The authors have calculated the electronic structure of Si/Ge superlattices grown on (111)-orientated substrates. The band offsets are determined from the local density of states. |
| Related Links | http://iopscience.iop.org/article/10.1088/0953-8984/1/SB/045/pdf |
| Ending Page | SB210 |
| Page Count | 2 |
| Starting Page | SB209 |
| ISSN | 09538984 |
| e-ISSN | 1361648X |
| DOI | 10.1088/0953-8984/1/sb/045 |
| Journal | Journal of Physics: Condensed Matter |
| Issue Number | SB |
| Volume Number | 1 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1989-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Journal of Physics: Condensed Matter Condensed Matter Physics Electronic Structure Si/ge Superlattices Superlattices Grown Structure of Si/ge |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Materials Science |