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Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3heterostructure
| Content Provider | Scilit |
|---|---|
| Author | Tobben, D. Wharam, D. A. Abstreiter, G. Kolthaus, J. P. Schäffler, Friedrich |
| Copyright Year | 1995 |
| Description | Journal: Semiconductor Science and Technology We have studied the low-temperature (T=25 mK) ballistic transport of electrons in a split-gate device fabricated from a $Si/Si_{0.7}Ge_{0.3}$ heterostructure. In the absence of a magnetic field the conductance is quantized in units of $i*4e^{2}$/h as the gate voltage is tuned where i is the number of occupied subbands. In this system, both the spin and the valley degeneracies have to be taken into account. These can be lifted by applying a perpendicular magnetic field. Magnetic depopulation of the one-dimensional subbands is observed and can be simulated using a simple square well potential model. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/10/5/025/pdf |
| Ending Page | 714 |
| Page Count | 4 |
| Starting Page | 711 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/10/5/025 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 5 |
| Volume Number | 10 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1995-05-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Condensed Matter Physics Ballistic Transport Quantum Point Contact Magnetic Field Electron Transport |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
