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Low-frequency noise in quantum point contacts
| Content Provider | Scilit |
|---|---|
| Author | Liefrink, F. Dijkhuis, J. I. Houten, H. Van |
| Copyright Year | 1994 |
| Description | Journal: Semiconductor Science and Technology The kinetics of electron transport in quantum point contacts has been studied by means of low-frequency noise spectroscopy. The temperature and frequency (Lorentzian of 1/f) dependences of the noise intensity are found to be device specific, in contrast to the conductance dependence, which universally exhibits a strong quantum size effect at low temperatures. The origin of the Lorentzian noise spectrum is electron trapping and release at a single trap close to the point contact, and is connected to random resistance switching in the time domain. The 1/f noise in other point contacts is attributed to a collection of traps in the vicinity of the point contact. A comprehensive model is presented which accounts for the conductance and temperature dependences of the noise in quantum point contacts. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/9/12/003/pdf |
| Ending Page | 2189 |
| Page Count | 12 |
| Starting Page | 2178 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/9/12/003 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 12 |
| Volume Number | 9 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1994-12-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Applied Physics Low Frequency Noise Electrostatic Potential Quantum Point Contact Time Domain Gallium Arsenide Electron Transport |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
