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Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
| Content Provider | Scilit |
|---|---|
| Author | Usui, Akira Sunakawa, Haruo Sakai, Akira Yamaguchi, A. Atsushi |
| Copyright Year | 1997 |
| Description | Journal: Japanese Journal of Applied Physics Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a $SiO_{2}$ mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the $SiO_{2}$ mask. As a result, GaN layers with a dislocation density as low as $6×10^{7}$ $cm^{-2}$ were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.36.L899/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.36.l899 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 7B |
| Volume Number | 36 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1997-07-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Manufacturing Engineering Photoluminescence |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
