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Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
| Content Provider | Scilit |
|---|---|
| Author | Hiramoto, Toshiro Hiramoto Toshiro Takamiya, Makoto Takamiya Makoto Koura, Hiroshi Koura Hiroshi Inukai, Takashi Inukai Takashi Gomyo, Hiroyuki Gomyo Hiroyuki Kawaguchi, Hiroshi Kawaguchi Hiroshi Sakurai, Takayasu Sakurai Takayasu |
| Copyright Year | 2001 |
| Description | Journal: Japanese Journal of Applied Physics |
| Related Links | http://pdfs.semanticscholar.org/6d5d/94d7b52f6bfad0989b5850c7daecd8eba897.pdf http://iopscience.iop.org/article/10.1143/JJAP.40.2854/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.40.2854 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4S |
| Volume Number | 40 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2001-04-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Complementary Metal Oxide Semiconductor Threshold Voltage |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |